On the relaxation limits of the hydrodynamic model for semiconductor devices

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	On the relaxation limits of the hydrodynamic model for semiconductor devices
	Qiu, YC ; Zhang, KJ
	2002-03-01
发表期刊	MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
ISSN	0218-2025
卷号	12 期号:3 页码:333-363
摘要	The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions axe also discussed.
关键词	global weak solution trace of weak solution relaxation limit compensated compactness Godunov scheme semiconductor hydrodynamic model
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000174918900002
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/16942
专题	中国科学院数学与系统科学研究院
通讯作者	Qiu, YC
作者单位	1.Univ Toulouse 3, CNRS, UMR 5640, MIP, F-31062 Toulouse 04, France 2.Acad Sinica, Inst Math, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Qiu, YC,Zhang, KJ. On the relaxation limits of the hydrodynamic model for semiconductor devices[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(3):333-363.
APA	Qiu, YC,&Zhang, KJ.(2002).On the relaxation limits of the hydrodynamic model for semiconductor devices.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(3),333-363.
MLA	Qiu, YC,et al."On the relaxation limits of the hydrodynamic model for semiconductor devices".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.3(2002):333-363.