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On the relaxation limits of the hydrodynamic model for semiconductor devices
Qiu, YC; Zhang, KJ
2002-03-01
Source PublicationMATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
ISSN0218-2025
Volume12Issue:3Pages:333-363
AbstractThe initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions axe also discussed.
Keywordglobal weak solution trace of weak solution relaxation limit compensated compactness Godunov scheme semiconductor hydrodynamic model
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics, Applied
WOS IDWOS:000174918900002
PublisherWORLD SCIENTIFIC PUBL CO PTE LTD
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Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/16942
Collection中国科学院数学与系统科学研究院
Corresponding AuthorQiu, YC
Affiliation1.Univ Toulouse 3, CNRS, UMR 5640, MIP, F-31062 Toulouse 04, France
2.Acad Sinica, Inst Math, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Qiu, YC,Zhang, KJ. On the relaxation limits of the hydrodynamic model for semiconductor devices[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(3):333-363.
APA Qiu, YC,&Zhang, KJ.(2002).On the relaxation limits of the hydrodynamic model for semiconductor devices.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(3),333-363.
MLA Qiu, YC,et al."On the relaxation limits of the hydrodynamic model for semiconductor devices".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.3(2002):333-363.
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