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On the relaxation limits of the hydrodynamic model for semiconductor devices 期刊论文
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2002, 卷号: 12, 期号: 3, 页码: 333-363
Authors:  Qiu, YC;  Zhang, KJ
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global weak solution  trace of weak solution  relaxation limit  compensated compactness  Godunov scheme  semiconductor hydrodynamic model  
The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations 期刊论文
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 卷号: 165, 期号: 2, 页码: 315-354
Authors:  Hsiao, L;  Zhang, KJ
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hydrodynamic model  global weak solution  zero relaxation limit  traces of weak solutions  compensated compactness  Godunov scheme