The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations

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	The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
	Hsiao, L; Zhang, KJ
	2000-08-10
发表期刊	JOURNAL OF DIFFERENTIAL EQUATIONS
ISSN	0022-0396
卷号	165 期号:2 页码:315-354
摘要	We establish the convergence and consistency of approximate solutions derived hy the modified Godunov scheme for the initial-boundary value problem to a simplified one-dimensional hydrodynamic model for semiconductors using the compensated compactness method. The traces of weak solutions are introduced and then the weak solutions are proved to satisfy the natural boundary conditions. The zero relaxation limit of the hydrodynamic model to the drift-diffusion model is proved when the momentum relaxation time tends to zero. (C) 2000 Academic Press.
关键词	hydrodynamic model global weak solution zero relaxation limit traces of weak solutions compensated compactness Godunov scheme
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics
WOS记录号	WOS:000088679600002
出版者	ACADEMIC PRESS INC
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/15057
专题	中国科学院数学与系统科学研究院
通讯作者	Hsiao, L
作者单位	CAS, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Zhang, KJ. The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2000,165(2):315-354.
APA	Hsiao, L,&Zhang, KJ.(2000).The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations.JOURNAL OF DIFFERENTIAL EQUATIONS,165(2),315-354.
MLA	Hsiao, L,et al."The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations".JOURNAL OF DIFFERENTIAL EQUATIONS 165.2(2000):315-354.