The relaxation limits to the bipolar hydrodynamic model for semiconductors

doi:10.1016/S0893-9659(03)00225-8

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	The relaxation limits to the bipolar hydrodynamic model for semiconductors
	Ling, H ; Mauser, NJ ; Zhang, KJ
	2004
发表期刊	APPLIED MATHEMATICS LETTERS
ISSN	0893-9659
卷号	17 期号:1 页码:95-100
摘要	Zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model with the general pressure-density relation for semiconductors axe established by the method of high energy estimates. (C) 2004 Elsevier Ltd. All rights reserved.
关键词	semiconductors bipolar hydrodynamic model zero relaxation limits
DOI	10.1016/S0893-9659(03)00225-8
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000188398400018
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/630
专题	中国科学院数学与系统科学研究院
通讯作者	Ling, H
作者单位	1.CAS, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Univ Vienna, Inst Math, A-1090 Vienna, Austria 3.NE Normal Univ, Dept Math, Changchun 130024, Peoples R China
推荐引用方式 GB/T 7714	Ling, H,Mauser, NJ,Zhang, KJ. The relaxation limits to the bipolar hydrodynamic model for semiconductors[J]. APPLIED MATHEMATICS LETTERS,2004,17(1):95-100.
APA	Ling, H,Mauser, NJ,&Zhang, KJ.(2004).The relaxation limits to the bipolar hydrodynamic model for semiconductors.APPLIED MATHEMATICS LETTERS,17(1),95-100.
MLA	Ling, H,et al."The relaxation limits to the bipolar hydrodynamic model for semiconductors".APPLIED MATHEMATICS LETTERS 17.1(2004):95-100.