A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect

doi:10.1109/TSM.2017.2779058

	A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect
	Xu, Jingjie 1,2; Ma, Zhaocan 2; Li, Hongliang 3,4; Song, Yu 3,4; Zhang, Linbo2,5 ; Lu, Benzhuo2,5
	2018-02-01
发表期刊	IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN	0894-6507
卷号	31 期号:1 页码:183-189
摘要	In order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO2-Si system. Since the time scale of the drift-diffusion processes is much larger than that of the chemical reaction processes, we use a multi-time-step algorithm to calculate the two types of processes, respectively. In this paper, partial differential equations used to describe the electrodiffusion processes are solved by a finite element method, while the chemical reactions taking place independently in every mesh node are solved as ordinary differential equations. We reproduce qualitative properties of total ionizing dose effect and compare our numerical results with experimental data and other simulation results. This paper paves a way for 3-D simulation of total ionizing dose and enhanced low dose rate sensitivity with high efficiency and robustness.
关键词	Drift-diffusion reaction ELDRS finite element method multi-time-step algorithm TID
DOI	10.1109/TSM.2017.2779058
语种	英语
资助项目	Science Challenge Program[TZ2016003-1] ; National Key Research and Development Program of Ministry of Science and Technology[2016YFB0201304] ; China NSF[21573274] ; China NSF[11404300] ; China NSF[91430215] ; China NSF[91530323] ; National Center for Mathematics and Interdisciplinary Sciences of Chinese Academy of Sciences
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Manufacturing ; Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000423530700021
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/29427
专题	计算数学与科学工程计算研究所
通讯作者	Song, Yu; Lu, Benzhuo
作者单位	1.Univ Sci & Technol China, Sch Math Sci, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, State Key Lab Sci & Engn Comp, Beijing 100190, Peoples R China 3.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610000, Sichuan, Peoples R China 4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621900, Peoples R China 5.Univ Chinese Acad Sci, Sch Math Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,et al. A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect[J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,2018,31(1):183-189.
APA	Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,Song, Yu,Zhang, Linbo,&Lu, Benzhuo.(2018).A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect.IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,31(1),183-189.
MLA	Xu, Jingjie,et al."A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect".IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 31.1(2018):183-189.