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A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect
Xu, Jingjie1,2; Ma, Zhaocan2; Li, Hongliang3,4; Song, Yu3,4; Zhang, Linbo2,5; Lu, Benzhuo2,5
2018-02-01
Source PublicationIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN0894-6507
Volume31Issue:1Pages:183-189
AbstractIn order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO2-Si system. Since the time scale of the drift-diffusion processes is much larger than that of the chemical reaction processes, we use a multi-time-step algorithm to calculate the two types of processes, respectively. In this paper, partial differential equations used to describe the electrodiffusion processes are solved by a finite element method, while the chemical reactions taking place independently in every mesh node are solved as ordinary differential equations. We reproduce qualitative properties of total ionizing dose effect and compare our numerical results with experimental data and other simulation results. This paper paves a way for 3-D simulation of total ionizing dose and enhanced low dose rate sensitivity with high efficiency and robustness.
KeywordDrift-diffusion reaction ELDRS finite element method multi-time-step algorithm TID
DOI10.1109/TSM.2017.2779058
Language英语
Funding ProjectScience Challenge Program[TZ2016003-1] ; National Key Research and Development Program of Ministry of Science and Technology[2016YFB0201304] ; China NSF[21573274] ; China NSF[11404300] ; China NSF[91430215] ; China NSF[91530323] ; National Center for Mathematics and Interdisciplinary Sciences of Chinese Academy of Sciences
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Manufacturing ; Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000423530700021
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/29427
Collection计算数学与科学工程计算研究所
Affiliation1.Univ Sci & Technol China, Sch Math Sci, Hefei 230026, Anhui, Peoples R China
2.Chinese Acad Sci, Acad Math & Syst Sci, State Key Lab Sci & Engn Comp, Beijing 100190, Peoples R China
3.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610000, Sichuan, Peoples R China
4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621900, Peoples R China
5.Univ Chinese Acad Sci, Sch Math Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,et al. A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect[J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,2018,31(1):183-189.
APA Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,Song, Yu,Zhang, Linbo,&Lu, Benzhuo.(2018).A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect.IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,31(1),183-189.
MLA Xu, Jingjie,et al."A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect".IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 31.1(2018):183-189.
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