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The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors
Hsiao, L; Wang, S
2001-04-01
发表期刊CHINESE ANNALS OF MATHEMATICS SERIES B
ISSN0252-9599
卷号22期号:2页码:195-210
摘要The authors study the asymptotic behavior of the smooth solutions to the Cauchy problems for two macroscopic models (hydrodynamic and drift-diffusion models) for semiconductors and the related relaxation limit problem. First, it is proved that the solutions to these two systems converge to the unique stationary solution time asymptotically without the smallness assumption on doping profile. Then, very sharp estimates on the smooth solutions, independent of the relaxation time, are obtained and used to establish the zero relaxation limit.
关键词hydrodynamic model semiconductors asymptotic behavior global smooth solution zero relaxation limit
语种英语
WOS研究方向Mathematics
WOS类目Mathematics
WOS记录号WOS:000169176500007
出版者BALTZER SCI PUBL BV
引用统计
文献类型期刊论文
条目标识符http://ir.amss.ac.cn/handle/2S8OKBNM/16608
专题中国科学院数学与系统科学研究院
作者单位1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China
推荐引用方式
GB/T 7714
Hsiao, L,Wang, S. The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors[J]. CHINESE ANNALS OF MATHEMATICS SERIES B,2001,22(2):195-210.
APA Hsiao, L,&Wang, S.(2001).The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors.CHINESE ANNALS OF MATHEMATICS SERIES B,22(2),195-210.
MLA Hsiao, L,et al."The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors".CHINESE ANNALS OF MATHEMATICS SERIES B 22.2(2001):195-210.
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