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The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors
Hsiao, L; Wang, S
2001-04-01
Source PublicationCHINESE ANNALS OF MATHEMATICS SERIES B
ISSN0252-9599
Volume22Issue:2Pages:195-210
AbstractThe authors study the asymptotic behavior of the smooth solutions to the Cauchy problems for two macroscopic models (hydrodynamic and drift-diffusion models) for semiconductors and the related relaxation limit problem. First, it is proved that the solutions to these two systems converge to the unique stationary solution time asymptotically without the smallness assumption on doping profile. Then, very sharp estimates on the smooth solutions, independent of the relaxation time, are obtained and used to establish the zero relaxation limit.
Keywordhydrodynamic model semiconductors asymptotic behavior global smooth solution zero relaxation limit
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics
WOS IDWOS:000169176500007
PublisherBALTZER SCI PUBL BV
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Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/16608
Collection中国科学院数学与系统科学研究院
Affiliation1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China
Recommended Citation
GB/T 7714
Hsiao, L,Wang, S. The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors[J]. CHINESE ANNALS OF MATHEMATICS SERIES B,2001,22(2):195-210.
APA Hsiao, L,&Wang, S.(2001).The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors.CHINESE ANNALS OF MATHEMATICS SERIES B,22(2),195-210.
MLA Hsiao, L,et al."The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors".CHINESE ANNALS OF MATHEMATICS SERIES B 22.2(2001):195-210.
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