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The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors
Hsiao, L; Zhang, KJ
2000-12-01
Source PublicationMATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
ISSN0218-2025
Volume10Issue:9Pages:1333-1361
AbstractThe convergence and consistency of approximate solutions derived by the modified Godunov scheme for the initial-boundary value problem to a bipolar hydrodynamic model for semiconductors are proved using the compensated compactness framework. The information of weak solutions to satisfy the boundary conditions is also displayed. The zero relaxation limit of the bipolar hydrodynamic model towards the drift-diffusion model is carried out when the current relaxation time tends to zero.
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics, Applied
WOS IDWOS:000165579000003
PublisherWORLD SCIENTIFIC PUBL CO PTE LTD
Citation statistics
Cited Times:48[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/15009
Collection中国科学院数学与系统科学研究院
AffiliationAcad Sinica, Inst Math, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Hsiao, L,Zhang, KJ. The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2000,10(9):1333-1361.
APA Hsiao, L,&Zhang, KJ.(2000).The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,10(9),1333-1361.
MLA Hsiao, L,et al."The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 10.9(2000):1333-1361.
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