The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors

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	The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors
	Hsiao, L; Zhang, KJ
	2000-12-01
发表期刊	MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
ISSN	0218-2025
卷号	10 期号:9 页码:1333-1361
摘要	The convergence and consistency of approximate solutions derived by the modified Godunov scheme for the initial-boundary value problem to a bipolar hydrodynamic model for semiconductors are proved using the compensated compactness framework. The information of weak solutions to satisfy the boundary conditions is also displayed. The zero relaxation limit of the bipolar hydrodynamic model towards the drift-diffusion model is carried out when the current relaxation time tends to zero.
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000165579000003
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/15009
专题	中国科学院数学与系统科学研究院
通讯作者	Hsiao, L
作者单位	Acad Sinica, Inst Math, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Zhang, KJ. The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2000,10(9):1333-1361.
APA	Hsiao, L,&Zhang, KJ.(2000).The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,10(9),1333-1361.
MLA	Hsiao, L,et al."The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 10.9(2000):1333-1361.