Large time behavior of the solutions to a hydrodynamic model for semiconductors

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	Large time behavior of the solutions to a hydrodynamic model for semiconductors
	Luo, T ; Natalini, R ; Xin, ZP
	1998-12-15
发表期刊	SIAM JOURNAL ON APPLIED MATHEMATICS
ISSN	0036-1399
卷号	59 期号:3 页码:810-830
摘要	We establish the global existence of smooth solutions to the Cauchy problem for the one-dimensional isentropic Euler-Poisson (or hydrodynamic) model for semiconductors for small initial data. In particular we show that, as t --> infinity, these solutions converge to the stationary solutions of the drift-diffusion equations. The existence and uniqueness of stationary solutions to the drift-diffusion equations are proved without the smallness assumption.
关键词	Euler-Poisson semiconductors asymptotic behavior smooth solutions
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000077508900003
出版者	SIAM PUBLICATIONS
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/13395
专题	中国科学院数学与系统科学研究院
通讯作者	Luo, T
作者单位	1.Acad Sinica, Inst Math, Beijing 100080, Peoples R China 2.Ist Applicaz Calcolo M Picone, I-00161 Rome, Italy 3.NYU, Courant Inst Math Sci, New York, NY 10012 USA
推荐引用方式 GB/T 7714	Luo, T,Natalini, R,Xin, ZP. Large time behavior of the solutions to a hydrodynamic model for semiconductors[J]. SIAM JOURNAL ON APPLIED MATHEMATICS,1998,59(3):810-830.
APA	Luo, T,Natalini, R,&Xin, ZP.(1998).Large time behavior of the solutions to a hydrodynamic model for semiconductors.SIAM JOURNAL ON APPLIED MATHEMATICS,59(3),810-830.
MLA	Luo, T,et al."Large time behavior of the solutions to a hydrodynamic model for semiconductors".SIAM JOURNAL ON APPLIED MATHEMATICS 59.3(1998):810-830.