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Large time behavior of the solutions to a hydrodynamic model for semiconductors
Luo, T; Natalini, R; Xin, ZP
1998-12-15
Source PublicationSIAM JOURNAL ON APPLIED MATHEMATICS
ISSN0036-1399
Volume59Issue:3Pages:810-830
AbstractWe establish the global existence of smooth solutions to the Cauchy problem for the one-dimensional isentropic Euler-Poisson (or hydrodynamic) model for semiconductors for small initial data. In particular we show that, as t --> infinity, these solutions converge to the stationary solutions of the drift-diffusion equations. The existence and uniqueness of stationary solutions to the drift-diffusion equations are proved without the smallness assumption.
KeywordEuler-Poisson semiconductors asymptotic behavior smooth solutions
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics, Applied
WOS IDWOS:000077508900003
PublisherSIAM PUBLICATIONS
Citation statistics
Cited Times:103[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/13395
Collection中国科学院数学与系统科学研究院
Affiliation1.Acad Sinica, Inst Math, Beijing 100080, Peoples R China
2.Ist Applicaz Calcolo M Picone, I-00161 Rome, Italy
3.NYU, Courant Inst Math Sci, New York, NY 10012 USA
Recommended Citation
GB/T 7714
Luo, T,Natalini, R,Xin, ZP. Large time behavior of the solutions to a hydrodynamic model for semiconductors[J]. SIAM JOURNAL ON APPLIED MATHEMATICS,1998,59(3):810-830.
APA Luo, T,Natalini, R,&Xin, ZP.(1998).Large time behavior of the solutions to a hydrodynamic model for semiconductors.SIAM JOURNAL ON APPLIED MATHEMATICS,59(3),810-830.
MLA Luo, T,et al."Large time behavior of the solutions to a hydrodynamic model for semiconductors".SIAM JOURNAL ON APPLIED MATHEMATICS 59.3(1998):810-830.
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