Weak solutions to isothermal hydrodynamic model for semiconductor devices

doi:10.1016/j.jde.2009.07.032

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	Weak solutions to isothermal hydrodynamic model for semiconductor devices
	Huang, Feimin2 ; Li, Tianhong2 ; Yu, Huimin 1,2
	2009-12-01
Source Publication	JOURNAL OF DIFFERENTIAL EQUATIONS
ISSN	0022-0396
Volume	247 Issue:11 Pages:3070-3099
Abstract	In this paper. the Cauchy problem of the isothermal hydrodynamic model for semiconductor devices is investigated. The existence of global weak entropy solutions with large initial data is obtained by using a modified fractional step Lax-Friedrichs scheme and the theory of compensated compactness. As a byproduct, the existence of entropy solutions to the Cauchy problem of the isentropic hydrodynamic model for a semiconductor with infinite mass is also proved. (C) 2009 Elsevier Inc. All rights reserved.
Keyword	Isothermal Euler-Poisson equations Entropy Compensated compactness Semiconductor
DOI	10.1016/j.jde.2009.07.032
Language	英语
Funding Project	Outstanding Youth Foundation of NSFC[10825102] ; NSFC-NSAFG[10676037] ; Major State Basic Research Development Program of China[2006CB805902] ; National Natural Science Foundation of China[10701073]
WOS Research Area	Mathematics
WOS Subject	Mathematics
WOS ID	WOS:000271209000008
Publisher	ACADEMIC PRESS INC ELSEVIER SCIENCE
Citation statistics
Document Type	期刊论文
Identifier	http://ir.amss.ac.cn/handle/2S8OKBNM/8856
Collection	应用数学研究所数学所
Corresponding Author	Yu, Huimin
Affiliation	1.Shandong Normal Univ, Dept Math, Jinan 250014, Peoples R China 2.Acad Sinica, Acad Math & Syst Sci, Beijing 100091, Peoples R China
Recommended Citation GB/T 7714	Huang, Feimin,Li, Tianhong,Yu, Huimin. Weak solutions to isothermal hydrodynamic model for semiconductor devices[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2009,247(11):3070-3099.
APA	Huang, Feimin,Li, Tianhong,&Yu, Huimin.(2009).Weak solutions to isothermal hydrodynamic model for semiconductor devices.JOURNAL OF DIFFERENTIAL EQUATIONS,247(11),3070-3099.
MLA	Huang, Feimin,et al."Weak solutions to isothermal hydrodynamic model for semiconductor devices".JOURNAL OF DIFFERENTIAL EQUATIONS 247.11(2009):3070-3099.

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