Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation

doi:10.1016/j.jde.2008.10.013

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	Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
	Ri, Jinmyong; Huang, Feimin
	2009-02-15
发表期刊	JOURNAL OF DIFFERENTIAL EQUATIONS
ISSN	0022-0396
卷号	246 期号:4 页码:1523-1538
摘要	The first half of this paper is concerning with the nonlinear drift-diffusion semiconductor model in d (d <= 3) dimensional space. The global estimate is achieved on the evolution of support of solution and the finite speed of propagation. The proof is based on the estimate of the weighted norm with special designed weight functions. In the second half, we prove the quasineutral limit locally for 1-dimensional standard drift-diffusion model with discontinuous. sign-changing doping profile. (C) 2008 Elsevier Inc. All rights reserved.
关键词	Drift-diffusion model Quasineutral limit Vacuum solution Finite speed of propagation
DOI	10.1016/j.jde.2008.10.013
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics
WOS记录号	WOS:000263335400010
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/7887
专题	应用数学研究所
通讯作者	Huang, Feimin
作者单位	Chinese Acad Sci, Inst Appl Math, AMSS, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Ri, Jinmyong,Huang, Feimin. Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2009,246(4):1523-1538.
APA	Ri, Jinmyong,&Huang, Feimin.(2009).Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation.JOURNAL OF DIFFERENTIAL EQUATIONS,246(4),1523-1538.
MLA	Ri, Jinmyong,et al."Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation".JOURNAL OF DIFFERENTIAL EQUATIONS 246.4(2009):1523-1538.