Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

doi:10.1007/s11425-008-0039-6

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	Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
	Hsiao Ling 1; Ju QiangChang 2; Wang Shu 3
	2008-09-01
发表期刊	SCIENCE IN CHINA SERIES A-MATHEMATICS
ISSN	1006-9283
卷号	51 期号:9 页码:1619-1630
摘要	The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.
关键词	quasi-neutral limit drift-diffusion equations multiple scaling asymptotic expansions
DOI	10.1007/s11425-008-0039-6
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied ; Mathematics
WOS记录号	WOS:000258251100005
出版者	SCIENCE PRESS
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/6515
专题	中国科学院数学与系统科学研究院
通讯作者	Hsiao Ling
作者单位	1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China 3.Beijing Univ Technol, Coll Sci, Beijing 100022, Peoples R China
推荐引用方式 GB/T 7714	Hsiao Ling,Ju QiangChang,Wang Shu. Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS,2008,51(9):1619-1630.
APA	Hsiao Ling,Ju QiangChang,&Wang Shu.(2008).Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile.SCIENCE IN CHINA SERIES A-MATHEMATICS,51(9),1619-1630.
MLA	Hsiao Ling,et al."Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile".SCIENCE IN CHINA SERIES A-MATHEMATICS 51.9(2008):1619-1630.