Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

doi:10.1109/TED.2021.3054359

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	Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT
	Guo, Jingrui 1,2,3,4; Zhao, Ying 1,2,3,4; Yang, Guanhua 1,2,3,4; Chuai, Xichen 1,2,3,4; Lu, Wenhao 1,2,3,4; Liu, Dongyang 1,2,3,4; Chen, Qian 1,2,3,4; Duan, Xinlv 1,2,3,4; Huang, Shijie 1,2,3,4; Su, Yue 1,2,3,4; Geng, Di 1,2,3,4; Lu, Nianduan 1,2,3,4; Cui, Tao 1,2,3,4; Jang, Jin 1,2,3,4; Li, Ling 1,2,3,4; Liu, Ming 1,2,3,4
	2021-04-01
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN	0018-9383
卷号	68 期号:4 页码:2049-2055
摘要	A surface potential-based compact model for independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) is proposed here. The transport theories of percolation conduction, trap-limited conduction (TLC), and variable range hopping (VRH) in extended and localized states are first considered simultaneously via Schroder method, obtaining a physical description of the transport mechanism under different conditions of temperature and gate voltage. Moreover, a single formulation of front and back surface potentials which is valid and extremely accurate in all operation regimes is developed. Based on the transport theories and surface potentials, the complete compact model is developed and verified using both numerical simulation and experiment with an excellent agreement, and the threshold compensation effect is also included. Finally, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment, which suggested that the proposed model can be successfully applied to circuit design.
关键词	Electric potential Solid modeling Logic gates Integrated circuit modeling Numerical models Thin film transistors Analytical models Analytical models independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) Schroder method surface potential threshold compensation effect
DOI	10.1109/TED.2021.3054359
收录类别	SCI
语种	英语
资助项目	National key research and development program[2017YFB0701703] ; National key research and development program[2018YFA0208503] ; National key research and development program[2016YFA0201802] ; Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences ; National Natural Science Foundation of China[61725404] ; National Natural Science Foundation of China[61890944] ; National Natural Science Foundation of China[61874134] ; National Natural Science Foundation of China[61804170] ; National Natural Science Foundation of China[61821091] ; National Natural Science Foundation of China[61888102] ; National Natural Science Foundation of China[61720106013] ; National Natural Science Foundation of China[61904195] ; National Natural Science Foundation of China[61404164] ; Beijing Training Project for the Leading Talents in ST[Z151100000315008] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030000] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030300]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:000633331000101
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/58394
专题	中国科学院数学与系统科学研究院
通讯作者	Li, Ling; Liu, Ming
作者单位	1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Univ Chinese Acad Sci, Sch Microelect, Beijing, Peoples R China 3.Chinese Acad Sci, Acad Math & Syst Sci, LSEC, NCMIS, Beijing 100190, Peoples R China 4.Kyung Hee Univ, Seoul 02447, South Korea
推荐引用方式 GB/T 7714	Guo, Jingrui,Zhao, Ying,Yang, Guanhua,et al. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(4):2049-2055.
APA	Guo, Jingrui.,Zhao, Ying.,Yang, Guanhua.,Chuai, Xichen.,Lu, Wenhao.,...&Liu, Ming.(2021).Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT.IEEE TRANSACTIONS ON ELECTRON DEVICES,68(4),2049-2055.
MLA	Guo, Jingrui,et al."Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT".IEEE TRANSACTIONS ON ELECTRON DEVICES 68.4(2021):2049-2055.