KMS Of Academy of mathematics and systems sciences, CAS
| Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT | |
| Guo, Jingrui1,2,3,4; Zhao, Ying1,2,3,4; Yang, Guanhua1,2,3,4; Chuai, Xichen1,2,3,4; Lu, Wenhao1,2,3,4; Liu, Dongyang1,2,3,4; Chen, Qian1,2,3,4; Duan, Xinlv1,2,3,4; Huang, Shijie1,2,3,4; Su, Yue1,2,3,4; Geng, Di1,2,3,4; Lu, Nianduan1,2,3,4; Cui, Tao1,2,3,4; Jang, Jin1,2,3,4; Li, Ling1,2,3,4; Liu, Ming1,2,3,4 | |
| 2021-04-01 | |
| Source Publication | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| ISSN | 0018-9383 |
| Volume | 68Issue:4Pages:2049-2055 |
| Abstract | A surface potential-based compact model for independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) is proposed here. The transport theories of percolation conduction, trap-limited conduction (TLC), and variable range hopping (VRH) in extended and localized states are first considered simultaneously via Schroder method, obtaining a physical description of the transport mechanism under different conditions of temperature and gate voltage. Moreover, a single formulation of front and back surface potentials which is valid and extremely accurate in all operation regimes is developed. Based on the transport theories and surface potentials, the complete compact model is developed and verified using both numerical simulation and experiment with an excellent agreement, and the threshold compensation effect is also included. Finally, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment, which suggested that the proposed model can be successfully applied to circuit design. |
| Keyword | Electric potential Solid modeling Logic gates Integrated circuit modeling Numerical models Thin film transistors Analytical models Analytical models independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs) Schroder method surface potential threshold compensation effect |
| DOI | 10.1109/TED.2021.3054359 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National key research and development program[2017YFB0701703] ; National key research and development program[2018YFA0208503] ; National key research and development program[2016YFA0201802] ; Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences ; National Natural Science Foundation of China[61725404] ; National Natural Science Foundation of China[61890944] ; National Natural Science Foundation of China[61874134] ; National Natural Science Foundation of China[61804170] ; National Natural Science Foundation of China[61821091] ; National Natural Science Foundation of China[61888102] ; National Natural Science Foundation of China[61720106013] ; National Natural Science Foundation of China[61904195] ; National Natural Science Foundation of China[61404164] ; Beijing Training Project for the Leading Talents in ST[Z151100000315008] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030000] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30030300] |
| WOS Research Area | Engineering ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Physics, Applied |
| WOS ID | WOS:000633331000101 |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.amss.ac.cn/handle/2S8OKBNM/58394 |
| Collection | 中国科学院数学与系统科学研究院 |
| Corresponding Author | Li, Ling; Liu, Ming |
| Affiliation | 1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Univ Chinese Acad Sci, Sch Microelect, Beijing, Peoples R China 3.Chinese Acad Sci, Acad Math & Syst Sci, LSEC, NCMIS, Beijing 100190, Peoples R China 4.Kyung Hee Univ, Seoul 02447, South Korea |
| Recommended Citation GB/T 7714 | Guo, Jingrui,Zhao, Ying,Yang, Guanhua,et al. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(4):2049-2055. |
| APA | Guo, Jingrui.,Zhao, Ying.,Yang, Guanhua.,Chuai, Xichen.,Lu, Wenhao.,...&Liu, Ming.(2021).Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT.IEEE TRANSACTIONS ON ELECTRON DEVICES,68(4),2049-2055. |
| MLA | Guo, Jingrui,et al."Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT".IEEE TRANSACTIONS ON ELECTRON DEVICES 68.4(2021):2049-2055. |
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