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双极器件LPNP辐照损伤效应的并行有限元数值模拟
王芹1; 马召灿1; 李鸿亮2; 张林波1; 卢本卓1
2020
Source Publication系统仿真学报
ISSN1004-731X
Volume32Issue:12Pages:2376-2382
Abstract在基于漂移扩散模型的半导体器件仿真模拟中,采用Zlamal有限元方法进行数值离散,结合提出的电离损伤耦合模型,对横向PNP (LPNP)双极晶体管(BJT,bipolar junction transistors)的电离损伤效应进行模拟。基于三维并行自适应有限元软件平台PHG (Parallel Hierarchical Grid)实现了模型和算法,并通过数值计算的方式成功模拟出了LPNP受电离辐射影响后出现的基极电流增大及电流增益退化的现象。进行了网格规模达1亿单元、并行规模达1 024进程的大规模数值实验,展示了算法良好的并行可扩展性。
KeywordZlamal finite element radiation damage effects LPNP BJT parallel simulation Zlamal有限元 辐照损伤效应 LPNP晶体管 并行数值模拟
Indexed ByCSCD
Language中文
CSCD IDCSCD:6860962
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Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/58385
Collection中国科学院数学与系统科学研究院
Affiliation1.中国科学院数学与系统科学研究院
2.四川师范大学
Recommended Citation
GB/T 7714
王芹,马召灿,李鸿亮,等. 双极器件LPNP辐照损伤效应的并行有限元数值模拟[J]. 系统仿真学报,2020,32(12):2376-2382.
APA 王芹,马召灿,李鸿亮,张林波,&卢本卓.(2020).双极器件LPNP辐照损伤效应的并行有限元数值模拟.系统仿真学报,32(12),2376-2382.
MLA 王芹,et al."双极器件LPNP辐照损伤效应的并行有限元数值模拟".系统仿真学报 32.12(2020):2376-2382.
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