Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices

doi:10.1016/j.jde.2006.01.022

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	Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
	Hsiao, L ; Wang, S
	2006-06-15
发表期刊	JOURNAL OF DIFFERENTIAL EQUATIONS
ISSN	0022-0396
卷号	225 期号:2 页码:411-439
摘要	In this paper the vanishing Debye length limit of the bipolar time-dependent drift-diffusion-Poisson equations modelling insulated semiconductor devices with p-n junctions (i.e., with a fixed bipolar background charge) is studied. For sign-changing and smooth doping profile with 'good' boundary conditions the quasineutral limit (zero-Debye-length limit) is performed rigorously by using the multiple scaling asymptotic expansions of a singular perturbation analysis and the carefully performed classical energy methods. The key point in the proof is to introduce a 'density' transform and two L-weighted Liapunov-type functionals first, and then to establish the entropy production integration inequality, which yields the uniform estimate with respect to the scaled Debye length. The basic point of the idea involved here is to control strong nonlinear oscillation by the interaction between the entropy and the entropy dissipation. (c) 2006 Elsevier Inc. All rights reserved.
关键词	quasineutral limit time-dependent drift-diffusion equations p-n junction multiple scaling asymptotic expansions gimel-weighted Liapunov-type functional
DOI	10.1016/j.jde.2006.01.022
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics
WOS记录号	WOS:000238101400002
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/3285
专题	中国科学院数学与系统科学研究院
通讯作者	Wang, S
作者单位	1.Beijing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Wang, S. Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2006,225(2):411-439.
APA	Hsiao, L,&Wang, S.(2006).Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices.JOURNAL OF DIFFERENTIAL EQUATIONS,225(2),411-439.
MLA	Hsiao, L,et al."Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices".JOURNAL OF DIFFERENTIAL EQUATIONS 225.2(2006):411-439.