Global existence and asymptotic behavior to the solutions of 1-D Lyumkis energy transport model for semiconductors

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	Global existence and asymptotic behavior to the solutions of 1-D Lyumkis energy transport model for semiconductors
	Chen, L ; Hsiao, L ; Li, Y
	2004-06-01
发表期刊	QUARTERLY OF APPLIED MATHEMATICS
ISSN	0033-569X
卷号	62 期号:2 页码:337-358
摘要	The global existence and asymptotic behavior of smooth solutions to the initial-boundary value problem for the 1-D Lyumkis energy transport model in semiconductor science is studied. When the boundary is insulated, the smooth solution of the problem converges to a stationary solution of the drift diffusion equations, exponentially fast as t --> infinity.
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000221291200008
出版者	AMER MATHEMATICAL SOC
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/19333
专题	中国科学院数学与系统科学研究院
通讯作者	Chen, L
作者单位	1.Tsing Hua Univ, Dept Math Sci, Beijing 100084, Peoples R China 2.CAS, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Chen, L,Hsiao, L,Li, Y. Global existence and asymptotic behavior to the solutions of 1-D Lyumkis energy transport model for semiconductors[J]. QUARTERLY OF APPLIED MATHEMATICS,2004,62(2):337-358.
APA	Chen, L,Hsiao, L,&Li, Y.(2004).Global existence and asymptotic behavior to the solutions of 1-D Lyumkis energy transport model for semiconductors.QUARTERLY OF APPLIED MATHEMATICS,62(2),337-358.
MLA	Chen, L,et al."Global existence and asymptotic behavior to the solutions of 1-D Lyumkis energy transport model for semiconductors".QUARTERLY OF APPLIED MATHEMATICS 62.2(2004):337-358.