Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device

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	Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device
	Chen, W
	2003-07-01
发表期刊	ACTA MATHEMATICA SCIENTIA
ISSN	0252-9602
卷号	23 期号:3 页码:386-398
摘要	The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method.. The electron and hole density equations axe treated by implicit-explicit multistep finite element methods. The schemes axe very efficient. The optimal order error estimates both in time and space are derived.
关键词	semiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics
WOS记录号	WOS:000184619900014
出版者	KLUWER ACADEMIC PUBL
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/19044
专题	中国科学院数学与系统科学研究院
作者单位	1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Shandong Univ, Sch Econ, Jinan 250100, Peoples R China
推荐引用方式 GB/T 7714	Chen, W. Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device[J]. ACTA MATHEMATICA SCIENTIA,2003,23(3):386-398.
APA	Chen, W.(2003).Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device.ACTA MATHEMATICA SCIENTIA,23(3),386-398.
MLA	Chen, W."Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device".ACTA MATHEMATICA SCIENTIA 23.3(2003):386-398.