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Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device
Chen, W
2003-07-01
Source PublicationACTA MATHEMATICA SCIENTIA
ISSN0252-9602
Volume23Issue:3Pages:386-398
AbstractThe transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method.. The electron and hole density equations axe treated by implicit-explicit multistep finite element methods. The schemes axe very efficient. The optimal order error estimates both in time and space are derived.
Keywordsemiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods
Language英语
WOS Research AreaMathematics
WOS SubjectMathematics
WOS IDWOS:000184619900014
PublisherKLUWER ACADEMIC PUBL
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Document Type期刊论文
Identifierhttp://ir.amss.ac.cn/handle/2S8OKBNM/19044
Collection中国科学院数学与系统科学研究院
Affiliation1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Shandong Univ, Sch Econ, Jinan 250100, Peoples R China
Recommended Citation
GB/T 7714
Chen, W. Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device[J]. ACTA MATHEMATICA SCIENTIA,2003,23(3):386-398.
APA Chen, W.(2003).Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device.ACTA MATHEMATICA SCIENTIA,23(3),386-398.
MLA Chen, W."Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device".ACTA MATHEMATICA SCIENTIA 23.3(2003):386-398.
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