Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors

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	Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors
	Hsiao, L; Wang, S
	2002-06-01
发表期刊	MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
ISSN	0218-2025
卷号	12 期号:6 页码:777-796
摘要	In this paper, we study the asymptotic behavior of smooth solutions to the initial boundary value problem for the full one-dimensional hydrodynamic model for semiconductors. We prove that the solution to the problem converges to the unique stationary solution time asymptotically exponentially fast.
关键词	full hydrodynamic model semiconductors asymptotic behavior global smooth solutions
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied
WOS记录号	WOS:000176897300002
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/17640
专题	数学所
通讯作者	Hsiao, L
作者单位	Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Wang, S. Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(6):777-796.
APA	Hsiao, L,&Wang, S.(2002).Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(6),777-796.
MLA	Hsiao, L,et al."Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.6(2002):777-796.