Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

doi:10.1006/jmaa.2001.7813

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	Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
	Gasser, I ; Hsiao, L ; Markowich, PA ; Wang, S
	2002-04-01
发表期刊	JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS
ISSN	0022-247X
卷号	268 期号:1 页码:184-199
摘要	The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates. (C) 2002 Elsevier Science (USA).
关键词	quasi-neutral limit nonlinear drift-diffusion equations entropy method
DOI	10.1006/jmaa.2001.7813
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied ; Mathematics
WOS记录号	WOS:000174952900013
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/17538
专题	中国科学院数学与系统科学研究院
通讯作者	Gasser, I
作者单位	1.Univ Hamburg, Fachbereich Math, D-20146 Hamburg, Germany 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 3.Univ Vienna, Inst Math, A-1090 Vienna, Austria
推荐引用方式 GB/T 7714	Gasser, I,Hsiao, L,Markowich, PA,et al. Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors[J]. JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,2002,268(1):184-199.
APA	Gasser, I,Hsiao, L,Markowich, PA,&Wang, S.(2002).Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors.JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,268(1),184-199.
MLA	Gasser, I,et al."Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors".JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS 268.1(2002):184-199.