Quasineutral limit of a standard drift diffusion model for semiconductors

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	Quasineutral limit of a standard drift diffusion model for semiconductors
	Xiao, L ; Markowich, PA ; Wang, S
	2002
发表期刊	SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN	1006-9283
卷号	45 期号:1 页码:33-41
摘要	The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i. e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.
关键词	quasineutral limit nonlinear drift-diffusion equations entropy method
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied ; Mathematics
WOS记录号	WOS:000175241700004
出版者	SCIENCE CHINA PRESS
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/17062
专题	中国科学院数学与系统科学研究院
通讯作者	Xiao, L
作者单位	1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Univ Vienna, Math Inst, A-1090 Vienna, Austria 3.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China
推荐引用方式 GB/T 7714	Xiao, L,Markowich, PA,Wang, S. Quasineutral limit of a standard drift diffusion model for semiconductors[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45(1):33-41.
APA	Xiao, L,Markowich, PA,&Wang, S.(2002).Quasineutral limit of a standard drift diffusion model for semiconductors.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,45(1),33-41.
MLA	Xiao, L,et al."Quasineutral limit of a standard drift diffusion model for semiconductors".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 45.1(2002):33-41.