On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors

doi:10.1006/jdeq.2000.3850

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	On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
	Zhang, KJ
	2001-04-10
发表期刊	JOURNAL OF DIFFERENTIAL EQUATIONS
ISSN	0022-0396
卷号	171 期号:2 页码:251-293
摘要	The global existance and zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors are established by the theory of compensated compactness. The boundary conditions of weak solutions in the sense of tracts are discussed. (C) 2001 Academic Press.
关键词	bipolar hydrodynamic model compensated compactness trace of weak solutions zero relaxation limits
DOI	10.1006/jdeq.2000.3850
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics
WOS记录号	WOS:000167877800003
出版者	ACADEMIC PRESS INC
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/16214
专题	中国科学院数学与系统科学研究院
通讯作者	Zhang, KJ
作者单位	1.Acad Sinica, Inst Math, Beijing 100080, Peoples R China 2.Univ Toulouse 3, F-31062 Toulouse, France
推荐引用方式 GB/T 7714	Zhang, KJ. On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2001,171(2):251-293.
APA	Zhang, KJ.(2001).On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors.JOURNAL OF DIFFERENTIAL EQUATIONS,171(2),251-293.
MLA	Zhang, KJ."On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors".JOURNAL OF DIFFERENTIAL EQUATIONS 171.2(2001):251-293.