Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors

doi:10.1016/j.jmaa.2005.03.063

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	Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
	Chen, L ; Hsiao, L ; Li, Y
	2005-12-15
发表期刊	JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS
ISSN	0022-247X
卷号	312 期号:2 页码:596-619
摘要	In this paper, the global existence and the large time behavior of smooth solutions to the initial boundary value problem for the multi-dimensional energy transport model are studied. It is also proved that the solutions of the problem converge to an isothermal drift-diffusion model as energy relaxation time tau goes to 0 by compactness argument with the help of energy estimates and entropy inequality. (c) 2005 Elsevier Inc. All rights reserved.
关键词	energy transport drift diffusion large time behavior energy relaxation time limit entropy inequality
DOI	10.1016/j.jmaa.2005.03.063
语种	英语
WOS研究方向	Mathematics
WOS类目	Mathematics, Applied ; Mathematics
WOS记录号	WOS:000233281500016
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
文献类型	期刊论文
条目标识符	http://ir.amss.ac.cn/handle/2S8OKBNM/1510
专题	中国科学院数学与系统科学研究院
通讯作者	Li, Y
作者单位	1.Tsing Hua Univ, Dept Math Sci, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Chen, L,Hsiao, L,Li, Y. Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors[J]. JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,2005,312(2):596-619.
APA	Chen, L,Hsiao, L,&Li, Y.(2005).Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors.JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,312(2),596-619.
MLA	Chen, L,et al."Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors".JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS 312.2(2005):596-619.