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On the relaxation limits of the hydrodynamic model for semiconductor devices 期刊论文
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2002, 卷号: 12, 期号: 3, 页码: 333-363
作者:  Qiu, YC;  Zhang, KJ
收藏  |  浏览/下载：97/0  |  提交时间：2018/07/30
global weak solution  trace of weak solution  relaxation limit  compensated compactness  Godunov scheme  semiconductor hydrodynamic model  
On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors 期刊论文
JOURNAL OF DIFFERENTIAL EQUATIONS, 2001, 卷号: 171, 期号: 2, 页码: 251-293
作者:  Zhang, KJ
收藏  |  浏览/下载：76/0  |  提交时间：2018/07/30
bipolar hydrodynamic model  compensated compactness  trace of weak solutions  zero relaxation limits  
The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors 期刊论文
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2000, 卷号: 10, 期号: 9, 页码: 1333-1361
作者:  Hsiao, L;  Zhang, KJ
收藏  |  浏览/下载：94/0  |  提交时间：2018/07/30
The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations 期刊论文
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 卷号: 165, 期号: 2, 页码: 315-354
作者:  Hsiao, L;  Zhang, KJ
收藏  |  浏览/下载：85/0  |  提交时间：2018/07/30
hydrodynamic model  global weak solution  zero relaxation limit  traces of weak solutions  compensated compactness  Godunov scheme