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Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 卷号: 68, 期号: 4, 页码: 2049-2055
作者:  Guo, Jingrui;  Zhao, Ying;  Yang, Guanhua;  Chuai, Xichen;  Lu, Wenhao;  Liu, Dongyang;  Chen, Qian;  Duan, Xinlv;  Huang, Shijie;  Su, Yue;  Geng, Di;  Lu, Nianduan;  Cui, Tao;  Jang, Jin;  Li, Ling;  Liu, Ming
收藏  |  浏览/下载：171/0  |  提交时间：2021/06/01
Electric potential  Solid modeling  Logic gates  Integrated circuit modeling  Numerical models  Thin film transistors  Analytical models  Analytical models  independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs)  Schroder method  surface potential  threshold compensation effect